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This paper presents a gate driver integrated circuit (IC) for Silicon Carbide (SiC) devices to fully utilize their high switching speed capabilities in a phase-leg configuration. Based upon the intrinsic properties prevalent in SiC devices, gate assist circuitry is integrated into a gate driver IC to control the gate voltages seen by both devices in a phase-leg during different switching transients...
High reliability of semiconductor power devices is one of the key design objectives for power conversion systems. Fast switching SiC devices are susceptible to cross-talk, and these devices also have limited over-current capability. Both of these issues significantly threaten the reliable operation of SiC-based voltage source converters. This paper proposes two gate assist circuits capable of suppressing...
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