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In this study, design considerations of gate driver for silicon carbide (SiC) power devices is discussed. The work is focused in minimizing the common-mode current injection into the control circuit, thereby adapting the gate circuit to operate at higher dv/dt of fast switching transients. By reducing the common-mode interference with the control circuit, the signal integrity can be increased, spurious...
In this paper, a novel technique is proposed to extend the region of zero voltage switching (ZVS) of a dual active bridge (DAB) dc–dc converter using an auxiliary series injection transformer. The series voltage injection by the series transformer helps us to maintain ZVS by controlling the reactive power flow through the main converter of the DAB. A model for the series compensation is developed...
The 15 kV SiC IGBT and 15 kV SiC MOSFET have been recently developed to enable non-cascaded high-frequency (HF) MV converters. Such direct MV DC interfacing Dual Active Bridge (DAB) converter is getting popular for DC micro-grid application due to higher efficiency, higher power-density and higher MTBF over the cascaded DAB topology. The high dv/dt in these devices on hard-switching with their inherent...
The 15kV SiC IGBT (2 μm buffer layer) with chip area of 8.4 × 8.4 mm2 is the state of the art high voltage device designed by Cree Inc. This device is expected to increase the power density of converters and the demonstration of the device in applications like Solid State Transformers has been published. Therefore, it is interesting to investigate the performance of the device in very high voltage...
. The 10 kV to 15 kV SiC MOSFET and 15 kV SiC IGBT are state of the art high voltage (HV) devices designed by Cree Inc. These devices are expected to increase the power density of converters and are expected to replace 4.5 kV/6.5 kV Si IGBTs. However, these are not commercially available. On the other hand low voltage (LV) 1.7 kV SiC MOSFET is commercially available, and it is replacing existing 1...
The 10–15kV SiC MOSFET and 15kV SiC IGBT (2 μm and 5 μm buffer layer) are the state of the art high voltage devices designed by Cree Inc. These devices are expected to increase the power density of converters and the demonstration of these devices in applications like Solid State Transformers (SST) have been reported up to 4.16 kV–13.2 kV grid connection. It is interesting to investigate the performance...
The advent of high voltage (HV) wide band-gap power semiconductor devices has enabled the medium voltage (MV) grid tied operation of non-cascaded neutral point clamped (NPC) converters. This results in increased power density, efficiency as well as lesser control complexity. The multi-chip 15 kV/40 A SiC IGBT and 15 kV/20 A SiC MOSFET are two such devices which have gained attention for MV grid interface...
The commercial gate drivers are available upto 6.5 kV IGBTs. With the advances in the SiC, power devices rated beyond 10 kV are being researched. These devices will have use on medium voltage power converters. Commercial gate drivers rated for such high voltages are not available. These power devices have very high dv/dts (30–100 kV/µs) at switching transitions. Such high dv/dts bring in challenges...
This paper presents an Intelligent Medium-voltage Gate Driver (IMGD) for 15kV SiC IGBT and 10kV SiC MOSFET devices. The high voltage-magnitude and high dv/dt(> 30kV/µs) of these MV SiC devices, pose design challenge in form of isolation and EMI. This problem is solved by development of a < 1pF isolation capacitance power-supply. But due to applied high stress, smaller short-circuit withstand...
High speed variable frequency motor drives are required for marine applications, compressors for oil and gas industries, wind energy generation systems etc. Traditionally, low voltage high speed motor drives are used in such applications. This results in large currents at high power levels leading to large copper loss in the motor winding. Therefore, medium voltage (MV) drives are being considered...
The low voltage SiC (Silicon carbide) MOSFET (1.2 kV to 1.7 kV) increases the switching frequency limits of a power electronic converter several folds compared to low voltage Si IGBTs. Significant increase in efficiency and power density of voltage source converters can be achieved. However, for medium-voltage high-power converter applications Silicon (Si) devices (4.5 kV and 6.5 kV IGBT) are still...
The 15 kV SiC MOSFET and 15 kV SiC IGBT are two state-of-the-art high voltage SiC devices. These high voltage SiC devices enable simple two level converters for medium voltage source converter compared to the complex three level and multilevel topologies with Silicon devices. This paper presents the detailed experimental results for the characterization of 15 kV SiC MOSFET module at 10 kV and 12 kV...
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