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We have studied As clustering and oxidation of As-implanted Si after a preoxidation (ramp-up) period with (N 2 + 1% O 2 ) ambients. Sheet resistance measuremenrs along with channeling studies indicate that significant arsenic clustering and arsenic supersaturation in Si occurred after ramping periods at 750 o C and 850 o C compared with results at 950 o C and...
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