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In this paper, we study the influence of p-type modulation doping on the dynamic/static performance of high-speed 850-nm VCSELs with highly strained multiple quantum wells. The studied device structure has a 3/$2~\lambda $ asymmetric cavity design, which can let the internal transit time of injected carriers be as short as that of 1/$2~\lambda $ cavity design and further improve its performance...
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