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As the technology node scales down, a sufficient read current that is capable of achieving a target read yield cannot be used because of the read disturbance problem in spin-transfer-torque random access memory (STT-RAM). As an alternative method, increasing the sensing circuit (SC) area is generally considered because it can reduce the threshold voltage (Vth) variations. However, the increased SC...
As technology node scaling, FinFET becomes the substitution for planar MOSFET due to several merits of FinFET such as superior gate controllability, large on-current, and low variability. For the reasons, using FinFET as access transistor of spin-transfer-torque random access memory (STT-RAM) cell should be analyzed. This paper compares using planar MOSFET and FinFET as access transistor of STT-RAM...
In this paper, we propose an optimal combination of transistor types in the conventional sensing circuit. A sensing margin, which determines the read yield of STT-RAM, is sensitive to the Vth type of several transistors in the sensing circuit. Thus, the optimization of the sensing circuit using different types of transistors is imptortant for designing the sensing circuit in STT-RAM. Using industry...
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