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Free space laser communication becomes one of the most attractive research pot of next generation optical communication technologies due to its advantages of large data transmission amount, high directionality of transmission and high transmission security. The tapered semiconductor lasers are one of the most important optical sources in such systems. In this paper, we introduce the structure design,...
The multiple quantum wells (MQWs) InGaAsSb/AlGaAsSb laser diodes (LDs) with an emission wavelength around 2.0μm were designed and fabricated by molecular beam epitaxy (MBE). The good performance of LD was achieved, with the low threshold current of 225 mA, and the slope efficiency of 0.23 W/A, respectively. The maximum outpower of 16 mW at 500 mA drive current was obtained at room temperature(RT).
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