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A simple analytical model is presented, which predicts the energy required for a reset operation in a phase change memory (PCM) device with a graphene monolayer between a bottom metallic electrode (BEC) and Ge2Sb2Te5 (GST) chalcogenide layer. The graphene effectively adds thermal boundary resistance between the GST and metal electrode, limiting the parasitic loss of heat into the electrode. Additionally,...
We report the thickness and phase dependent thermal properties of Ge2Sb2Te5 (GST) films using electrical Joule heating thermometry (3ω method) and validate the data with optical thermometry. The intrinsic thermal conductivity of GST increases from 0.26 W/mK for the amorphous phase to 0.57 W/mK for the crystalline phase. The thermal boundary resistance between GST and Si3N4 films decreases from 134...
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