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This paper discusses suitable short-through mode for a Z-source inverter using SiC-MOSFET to achieve high switching frequency operation. The Z-source inverter has short-through mode for boost operation and several control techniques about short-through mode have been discussed from points of device stress and boost ratio; however, loss analysis from perspective of short-through mode implementation...
In comparison with Si-IGBT, Silicon Carbide (SiC)-MOSFET is expected to reduce switching loss and conduction loss of low-current region, as well as to remove external Free Wheeling Diode (FWD). However, because SiC-MOSFET bodydiode has high forward voltage, the diode conduction loss increases in the period of the dead time and, as a result, its loss reduction effect by using SiC-MOSFET decreases....
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