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We used a high dielectric constant material, hafnium dioxide (HfO2) as the dielectric layer and N, N'-ditridecyl-3, 4, 9, 10-pervlene tetracarboxylic diimide (PTCDI-C13) as the active layer to fabricate low voltage-driven organic thin-film transistor (OTFT) devices. After modifying the surface of HfO2 by polyimide (PI), the electrical characteristics and stability of PTCDI-C13-based OTFTs were considerably...
An ultrahigh ON/OFF-current ratio of 5 × 109 is presented in a resistive memory device using Au nanoparticles (Au NPs)-incorporated poly(N-vinylcarbazole) (PVK) and poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) stacking configurations as the active layer and Al as electrodes for nonvolatile-memory application. The investigation also suggests that the enhancement of...
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