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Monolithic, epitaxial, series-connected GaAs0.75P0.25/Si dual-junction solar cells, grown via both molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD), are reported for the first time. Fabricated test devices for both cases show working tandem behavior, with clear voltage addition and spectral partitioning. However, due to thermal budget limitations in the MBE growth needed...
Monolithic, direct epitaxial GaAs0.75P0.25/Si dual-junction (2J) solar cell structures have been grown via both molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Fabricated test devices show working tandem behavior, with clear voltage addition and spectral partitioning, in both cases. Due to the thermal sensitivity of the MBE-grown tunnel junction structure, growth...
GaP/active-Si junctions were grown by metalorganic chemical vapor deposition via a previously developed process that yields GaP-on-Si integration free of heterovalent-related defects. N-type Si emitter layers were grown on p-type (100)-oriented Si substrates, followed by the growth of n-type GaP window layers, to form fully-active sub-cell structures compatible with integration into monolithic III-V/Si...
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