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A method of patterning atomic layer deposition (ALD) deposited aluminium oxide dielectrics (Al2O3) using an inkjet printer is outlined. This method has applications in creating PERC cell type rear contacts. It is simpler, and uses fewer chemicals than immersive etching techniques such as those involved in photolithography, and the patterning does not cause damage to the silicon evident in laser ablation...
Inverted pyramids and v‐groove texturing has been employed for high efficiency cells because they provide advantages over the conventional upright random pyramid texturing used industrially. This letter reports the use of an inkjet‐patterning technique as an alternative to the expensive and complex photolithography method normally used for the dielectric patterning step required for the fabrication...
This paper presents a passivated emitter and rear cell (PERC) design featuring an anodic aluminium oxide (AAO) - thin SiO2 stack layer for rear surface passivation. Rear contacts were formed by laser-doping lines through the nano-porous AAO layer and then sintering aluminium through the lines to make electrical contact. Open circuit voltages as high as 660 mV were achieved which is comparable to voltages...
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