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A method of patterning atomic layer deposition (ALD) deposited aluminium oxide dielectrics (Al2O3) using an inkjet printer is outlined. This method has applications in creating PERC cell type rear contacts. It is simpler, and uses fewer chemicals than immersive etching techniques such as those involved in photolithography, and the patterning does not cause damage to the silicon evident in laser ablation...
Previously, we proposed a novel rear contacting scheme comprising a porous anodic aluminum oxide (AAO) layer for forming point rear contacts to silicon solar cells. In this paper, we report that, if the rear-side AAO layer is formed over an intervening dielectric layer of either SiNx or thermally-grown SiO2, then high minority carrier lifetimes are possible. Using photoconductance decay measurements...
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