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A +20dBm, 60 GHz power amplifier (PA) with fully-integrated automatic level control is fabricated in a 0.13 mum SiGe BiCMOS process. At 60 GHz, the PA achieves a peak power gain of IS dB with 13.1 dBm output power at a 1-dB compression and a peak power-added efficiency (PAE) of 12.7 %. The PA uses a single-stage push-pull amplifier topology with center-taped microstrip lines. This enables a highly...
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