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The increased awareness of the significance of solar energy has led to intensified research in the areas of solar energy harvesting. To increase the cost effectiveness of the generation of solar power, silicon carbide (SiC) power devices are playing a major role in the power electronics technology due to its superior material properties compared to Silicon (Si). The photovoltaic (PV) inverter is a...
The superior electro-thermal properties of Silicon Carbide (SiC) as compared to silicon make them a viable candidate for high voltage and high frequency applications. Due to the relatively recent surge in commercially available SiC power MOSFETs, there is an immediate demand for accurate simulations models to predict device behavior and aid circuit design process. This paper discusses the development...
The purpose of this paper is to provide guidance on how to design gate driver circuits for Silicon Carbide (SiC) MOSFETs. There are new commercially available SiC MOSFETs available in discrete and module packages which are much faster and more efficient than their traditional IGBT counterparts. To take full advantage of these benefits we need to understand the requirements for a new breed of gate...
There is little work done to study the nuances related to paralleling the higher speed SiC Mosfet devices when compared to Si devices. This paper deals with the parallel operation of packaged silicon carbide (SiC) MOSFETs. The parameters that affect the static and dynamic current sharing behavior of the devices have been studied. We also investigate the sensitivity of those parameters to the junction...
The paper proposes a single end Flyback design with Silicon Carbide (SiC) based 1700V MOSFET to replace conventional two-switch Flyback converter. An active start-up circuit with 1700V SiC MOSFET is implemented to optimize the converter design with wide input voltage from 200Vdc to 1000Vdc and lower power losses. A 60W auxiliary power supply is developed to demonstrate higher performance and less...
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