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This paper presents a physics-based mathematical model for anionic memristor devices. The model utilizes Poisson- Boltzmann equation to account for temperature effect on device potential at equilibrium and comprehends material effect on device behaviors. A detailed MATLAB based algorithm is developed to clarify and simplify the simulation environment. Moreover, the provided model is used to simulate...
This paper describes the synthesis of micro-thick hafnium-oxide (∼ 60 μm) memristors using a low-cost sol-gel drop-coating technique, and emphasizes on key parameters to be considered in the development of the microscale technology. The impact of electrode material on the device I-V electrical behavior is screened with the use of different metals, with different work-functions and oxygen affinities...
Memristor has a potential to play a big role in the electronics industry as it provides small size, low cost and low power. However, the asymmetry between the ON and OFF switching times of the device hinders the adaption of the device in modern electronics systems. The contribution of this paper is to explore the relationship between the length of the memristor and the switching times. To achieve...
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