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Conventional charge-based memory usage in low-power applications is facing major challenges. Some of these challenges are leakage current for static random access memory (SRAM) and dynamic random access memory (DRAM), additional refresh operation for DRAM, and high programming voltage for Flash. In this paper, two emerging resistive random access memory (ReRAM) technologies are investigated, memristor...
Memristor is a good candidate for replacing CMOS-based flash and DRAM due to its superior scalability, low read energy and non-volatility characteristics. Relatively longer write time and high write energy are the main obstacles in the way of adapting memristor for on-chip memory to replace SRAM. The off-to-on resistance ratio for memristor are in excess of 1000x which provides adequate noise margin...
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