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We show that inorganic fluorides, such as NaF and NH4F, can etch SiO2 in the presence of HCl vapor resulting in a negative tone pattern transfer to a SiO2 substrate. Using a polydimethylsiloxane stamp, we demonstrate high-quality one-step pattern transfer to a SiO2 substrate. Compared with traditional HF vapor etching and buffered oxide etching methods, the current approach avoids direct handling...
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