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In this paper, a new analytical model for the surface electrical field distributions of double RESURF LDMOS is presented. Based on the 2-D Poisson solution, the model gives the influence on the surface electrical field in terms of the drain bias and structure parameters, such as the doping concentration, the depth and the position of the P-top region, the thickness and the doping concentration of...
In this paper, a new analytical model for the surface electrical field distributions of double RESURF LDMOS is presented. Based on the 2-D Poisson solution, the model gives the influence on the surface electrical field in terms of the drain bias and structure parameters, such as the doping concentration, the depth and the position of the P-top region, the thickness and the doping concentration of...
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