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We have fabricated a test chip with various hexagonal arrays of B-doped Si tips (height ∼ 3 μm, apex radius < 30 nm, number 1–4447, resistivity 4 Ωcm, 100 orientation) in triangular arrangement (pitch 10 μm, density 1.16×106 cm−2) in order to systematically investigate the field emission current scaling with the number N of tips. Regulated voltage scans for 1 nA revealed rather efficient emission...
The electron current from field-emitting B-doped Si-tip arrays under illumination was studied. An improved cathode design with a patch of 271 tips yielded a reproducible cathode current between 0.2–2000 nA in the electric field range of 3.8–6.6 V/μm. The plateau in the Fowler-Nordheim plot shows the actual carrier depletion and leads to a very stable emission at ∼1 μA with a current noise of less...
In order to improve the uniformity and field emission stability of p-type silicon tip arrays for pulsed sensor applications, we have systematically studied the influence of the fabrication parameters on the tip shape and the specific operating conditions. Based on detailed design calculations of the field enhancement, we have fabricated a series of hexagonal arrays of B-doped Si-tips in a triangular...
Silicon-based cathodes with precisely aligned field emitter arrays (FEA) applicable for miniaturized electron sources were successfully developed and fabricated. The cathode chips contain about 3×105 Si tips/cm2 in a triangular array with a tip height of 2.5 µm, tip radius of 20 nm, and lateral distance between tips of 20 µm. Amazingly homogeneous and well-aligned field emission (FE) from all tips...
The influence of laser illumination on the integral as well as on the energy-resolved electron currents from well-defined p-doped Si-tip arrays was investigated. First results have provided stable cathode currents between 100 nA and 500 µA in a field range of 2-20 V/µm. Green laser illumination resulted in an enhanced cathode current and an increased population of the conduction band which can be...
We report on the design, fabrication and characterization of p-type silicon field emitter arrays for the application in compact fast switchable electron sources. Since standard silicon technology has been used to prepare the devices, they can be easily integrated with other silicon based sensors and electronic components, too. The emitter arrays consist of approx. 3×105 tips per cm2, with a tip radius...
At present carbon nanotubes (CNT) are the most prospective cathode material for triode applications because of their strong field emission (FE) at low electric fields. The FE homogeneity of flat CNT cathodes, however, is still limited by their rather fast and uncontrolled growth which usually leads to strongly varying field enhancement and current carrying capability of the individual emitters. Therefore,...
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