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A P-SiC (Phosphorus doped Si1−xCx) SD (Source Drain) was developed on bulk-Si based nMOS FinFETs (n-FinFETs). P-SiC epitaxial growth on SD provides strain to boost n-FinFET mobility and drive current. Combination of LA (Laser Anneal) and low temperature RTA recovers P-SiC and PSi (Phosphorus doped Si, Si1-xPx) strain. A SiGe clad channel on pMOS FinFETs (p-FinFETs) was investigated. Narrower Si fin...
This paper is the first to provide a comprehensive study on the layout dependence of scaled Si1-xGex-channel pFETs. Drive current enhancement up to 90% is demonstrated for Si0.55Ge0.45-channel pFETs with LG = 35 nm and EOT = 0.9 nm when the transistor width (W) is scaled from 10 μm to 110 nm. This is attributed to a change in channel stress from biaxial compressive at large W to the more beneficial...
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