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In high efficiency and high temperature industrial applications, wide bandgap semiconductor devices, such as: Gallium Nitride (GaN) and Silicon Carbide (SiC), are getting great attention due to their outstanding performance. However, a false turn-on phenomenon can be produced by the switching noise because wide bandgap devices have low threshold voltage. Consequently, the efficiency of a switched-mode...
Currently, driving power circuits at high switching frequency is performed in order to downsize and lighten switching power supplies. Along with it, wide band gap semiconductor devices, GaN and SiC, have attracted attention. However, there is a great constrain related to the false turn-on phenomenon produced by gate noise because these wide band gap semiconductor devices have low threshold voltage...
Higher efficiency performances, lower EMI/RFI noise, and low cost boost converter have been required in power conversion system for Electric Vehicle, Plug-in Hybrid Electric Vehicle. Recovery-less boost converter are satisfied all those demands, without active power switch. So far, recovery-less boost converter are proposed two method; with the auxiliary inductor type or the saturable inductor type...
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