The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper analyses RF substrate losses and non-linearity on Si-based substrates. Through measurements it is shown that trap-rich high resistivity silicon and porous silicon substrates are virtually lossless up to 120°C. Although, RF losses and CPW attenuation increases with temperature on both Si-based solutions, they remain acceptable for high temperature RF applications. Porous locally grown silicon...
We present for the first time the RF and linear performance of commercial 200 mm trap-rich HR-SOI wafers. These wafers are fully compatible with the thermal budget of CMOS process. The investigated SOI wafers with a fixed BOX of 400 nm-thick show effective resistivity values higher than 4 kΩ-cm and harmonic distortion levels lower than −81 dBm for a 900 MHz input signal with +15 dBm, i.e. more than...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.