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With the improvement of voltage level of HVDC transmission, the insulation of converter transformer has become increasingly prominent. Different from the general power transformer, valve side windings on converter transformer withstand pulsating voltages, which makes insulation problem get more serious. In this paper, experiments were carried out under pulsating voltage over a wide range of the pulsating...
The resistance switching characteristics of Cu doped HfO2 film are investigated for nonvolatile memory. Two stable states can be achieved under both pulse and DC electrical stress. Good performances including large storage window, fast operation speed, good endurance, and long time retention are shown in this device. The metallic filament is confirmed as the physical origin for resistance switching...
ZrO2-based resistive random access memory devices composed of a thin Cu doped ZrO2 film sandwiched between an oxidizable top electrode and an inert bottom electrode are fabricated by e-beam evaporation at room temperature. The devices show reproducible nonpolar resistive switching. The formation and annihilation of localized conductive filaments is suggested to be responsible for the resistive switching...
The reliable resistive switching properties of Au/ZrO2/ Ag structure fabricated with full room temperature process are demonstrated in this letter. The tested devices show low operation voltages (< 1 V), high resistance ratio (about 104), fast switching speed (50 ns), and reliable data retention (ten years extrapolation at both RT and 85 ??C). Moreover, the benefits of high yield and multilevel...
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