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In this paper, a high speed 256-bit carry look ahead adder has been designed using 22nm strained silicon technology. The proposed adder combines the advantage of both the static and dynamic designs, which exhibits lower leakage, higher noise immunity and high speed. The speed performance of the proposed 256-bit adder is significantly improved by computing the even and the odd carries separately by...
The last few decades have seen considerable progress in development of techniques for growing single crystal silicon film on insulator (SOI) substrates suitable for the fabrication of high performance devices. The SOI substrates promise to extend the range of applications including VLSI, memory, analog and digital integrated circuits and mixed signal applications. In this paper, the performance of...
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