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Motor driver is one of the most important parts in EV and HEV, and power electronics device plays a dominate role in it. Silicon Carbide (SiC) power devices have shown great advantages compared with conventional Si power device for high voltage, high frequency, and high temperature applications, which shows great potential in motor driver applications. In this work, a 1200V/100A all-SiC power module...
This paper presents the structural design, prototype development, and testing of high-voltage silicon carbide (SiC) trenched-and-implanted vertical JFETs. Key design factors including drift layer doping concentration and thickness, channel dimensions, and termination structures are studied with numerical simulations. Devices are then fabricated in our research level facilities. The fabricated device...
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