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A SiC BJT model including quasi-saturation effects is proposed in this paper. The model limits the number of parameters required for the Gummel-Poon model and the model parameters have been extracted from experimental plots. The modeling results are then implemented in a circuit simulator such as Saber to build a SiC BJT model. Validity of the model is confirmed by comparing the model with experimental...
A method for evaluating the actual parameters of SiC-JFETs with good accuracy is presented. For precise SiC-JFETs modeling, accurate parameters have to be evaluated. During the simulation study, a significant discrepancy is observed between the simulation and measurement transfer characteristics, especially at gate biases close to its threshold value. In order to account for such discrepancy, probability...
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