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We developed a high speed and high efficiency of depletion type Si optical modulator (Si-MOD) with a pn junction by applying a p-type-doped strained SiGe layer which was stacked on the lateral pn junction type Si-MOD. We designed the optimum Si-MOD structure and demonstrated a high modulation efficiency of 1.0 Vcm, which is about 50% more efficient than that of Si-MOD with a lateral pn junction. We...
A photonic integrated circuit capable of 1×100 switching is reported. The switch, incorporating more than 250 photonic components along with numerous passive waveguides and bends, demonstrates power penalty <; 1 dB at 10 Gbps and extinction ratio > 50 dB.
We fabricate and demonstrate all-optical packet switching using a single photonic integrated circuit (PIC), which is constructed from monolithically integrated all-optical flip-flop and switch. Both 10 and 40-Gb/s signal can be transmitted through the PIC.
Extremely compact low-loss 4 channel arrayed waveguide grating with 147??92 ??m2 device size was demonstrated using ultrahigh index contrast InGaAsP photonic wire waveguides on Si, compatible for the monolithic integration of high-performance III-V CMOS transistors.
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