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Cubic silicon carbide (3C-SiC) has received a great deal of attention since it is a suitable material for electronic and MEMS devices operating in harsh environments. But difficulties still exist in realizing high throughput of high quality material. In the present paper, 3C-SiC layers have been grown on Si(111) in a vertical multi-wafer WCVD (Warm-wall Chemical Vapor Deposition) reactor with a rotating...
Three types of defects, namely comet I, comet II and carrot, in thick 4H-SiC homoepilayer were investigated by the micro-Raman scattering measurements. Comet defects were originated from certain cores which caused by the point defects or the inclusions on the surface of the substrate. 3C-SiC inclusions, which were not contained in carrot, were found in comet defects. The different distribution of...
The p+/p-/n-/n+ structure ultraviolet 4H-SiC photodiodes with different sizes of active areas have been fabricated and characterized by the I-V characteristics and photoresponse spectra. The statistical leakage current was around 10 -11nA at zero bias and it was less than 10-9 A at -5 V obtained from the 100 times 100 mum2 size samples. The photoresponse spectra, measured at different biases, showed...
The AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) structure was grown by metal organic chemical vapor deposition (MOCVD) on (0001) sapphire substrates. The electron transport properties were investigated by variable temperature Hall effect measurements. The fabricated devices with gate length of 0.8mum and gate width of 120 mum show a transconductance of 136mS/mm and maximum drain current...
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