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The p+/p-/n-/n+ structure ultraviolet 4H-SiC photodiodes with different sizes of active areas have been fabricated and characterized by the I-V characteristics and photoresponse spectra. The statistical leakage current was around 10 -11nA at zero bias and it was less than 10-9 A at -5 V obtained from the 100 times 100 mum2 size samples. The photoresponse spectra, measured at different biases, showed...
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