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Analysis of the operation of CMOS gates is a complicated procedure. These gates can be replaced by equivalent inverters and therefore the expressions for the inverters are used to determine the electrical characteristics of the gates. In this paper, the equivalent inverter approach for replacing CMOS gates is evaluated. The NAND gate is used for this evaluation. Parametric expressions are created...
Analytical compact model for the drain current and trans-capacitances of undoped or lightly doped nanoscale FinFETs with trapezoidal cross section is presented. The compact model of rectangular FinFETs is applied in trapezoidal FinFETs using the concept of the equivalent device parameters. The model is compared with the results of three-dimensional numerical device simulations. The overall results...
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