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This paper presents the design of a modified StrongArm regenerative comparator in 0.13-μm CMOS technology, operating at a supply voltage of 200-mV. The comparator uses a pair of cross-coupled P-type transistors to replace the conventional cross-coupled inverters, improving the comparison time and voltage headroom. A robust S-R latch is proposed to solve the race condition which occurs when the S-R...
Implementations of SRAM cells in FinFET and carbon nanotube FET (CNTFET) technologies are presented in this paper. The International Technology Roadmap for Semiconductors has identified these technologies as likely candidates to replace bulk CMOS. Leakage current is one of the major contributors in the power consumption in SRAM arrays; FinFETs have been shown to greatly reduce leakage current. The...
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