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This letter for the first time proposes a hybrid P/N substrate as a poly-Si p-channel for junctionless thin-film transistor (JL-TFT) with nanowires and omega-gate structures. The hybrid P/N JL-TFT exhibits a high $I_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ /$I_{\mathrm {\mathrm{{\scriptstyle OFF}}}}$ current ratio (> 107), a steep subthreshold swing of 64 mV/dec, and a low drain-induced barrier...
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