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Transient thermoreflectance imaging method has been applied for the first time to reveal current distribution in ESD protection devices through the surface temperature change due to self heating. Experimentally calibrated temperature images are obtained of a multiple finger, 80 square micron 100V NLDMOS-SCR device in snapback operation regimes for different current levels (1.15-1.47A) and at different...
Thermoreflectance microscopy is a well established method for the thermal imaging of (opto)electronic components and ICs. The technique combines submicron spatial resolution with excellent temperature resolution (10mK can be achieved). The dynamic thermal behavior can be studied using either a transient pulsed boxcar or frequency domain approach, the latter including homodyne and heterodyne lock-in...
Thermoreflectance thermal imaging is a proven method for obtaining quantitative temperature maps of active semiconductor devices in the nanometer to millimeter size. The resolution of such images obtained using a charge coupled device (CCD) based thermoreflectance system in a reasonable time, has been shown to be 200 nanometer spatial (visible light diffraction limit), 0.1 K temperature sensitivity,...
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