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In this paper, a 3kW boost converter for PV applications using SiC devices is introduced. Main focus is to operate the converter over a wide range of switching frequency and to analyze the main loss distributors as well as the efficiency. The switching element is a recently introduced normally-on SiC JFET and a SiC diode is used. The SiC JFET has been evaluated on an optimized double pulse test circuit...
This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247 package, has a major influence on the switching energy. Crucial design guidelines for an improved double...
In an isolated power supply, the inter-winding parasitic capacitance plays a vital role in the mitigation of common mode noise currents created by fast voltage transient responses. The lower the transformer inter-winding capacitance, the more immune the power supply is to fast voltage transient responses. This requirement is even more critical for modular stacking applications in which multiple power...
This paper deals with a 3kW multilevel inverter used for PV applications. A comparison has been made based on simulations using IGBTs and SiC MOSFETs to see how much efficiency can be gained when SiC diodes are used. A prototype with the same IGBTs and SiC MOSFETs has been built but using regular soft-recovery Si diodes instead of SiC diodes. Efficiencies and switching transitions for different switching...
Silicon Carbide (SiC) power devices can provide a significant improvement of power density and efficiency in power converters. The switching performances of SiC power devices are often a trade-off between the gate driver complexity and the desired performance; this is especially true for SiC BJTs and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing...
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