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The amorphous to face-centered cubic (fcc) and fcc to hexagonal close-packed (hcp) crystallization temperatures of GeSbTe thin films on underlying silicon nitride and silicon dioxide films were studied through slow (1K/min) resistance versus temperature measurements. The amorphous to fcc phase transition is observed at ~170°C for both cases but the fcc to hcp phase transition temperature for GeSbTe...
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