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High reliability, availability, and serviceability are critical for modern large-scale computing systems. As an effective error recovery mechanism, checkpointing has been widely used in such systems for their survival from unexpected failures. The conventional checkpointing schemes, however, are time-consuming due to the limited I/O bandwidth between the DRAM-based main memory and the backup storage...
Emerging memory technologies such as STT-RAM, PCRAM, and resistive RAM are being explored as potential replacements to existing on-chip caches or main memories for future multi-core architectures. This is due to the many attractive features these memory technologies posses: high density, low leakage, and non-volatility. However, the latency and energy overhead associated with the write operations...
Phase-change memory (PCM) is an emerging memory technology that has made rapid progress in the recent years, and surpasses other technologies such as FeRAM and MRAM in terms of scalability. Recently, the feasibility of multi-level cell (MLC) for PCM, which enables a cell to store more than one bit of digital data, has also been shown. This new property makes PCM more competitive and considered as...
Emerging non-volatile memory (NVM) technologies are getting mature in recent years. These emerging NVM technologies have demonstrated great potentials for the universal memory hierarchy design. Among all the technology candidates, resistive random-access memory (RRAM) is considered to be the most promising as it operates faster than phase-change memory (PCRAM), and it has simpler and smaller cell...
Phase-Change Random Access Memory (PRAM) has become one of the most promising emerging memory technologies, due to its attractive features such as high density, fast access, non-volatility, and good scalability. The physical characteristics of a PRAM cell mainly depend on the material characteristic and the fabrication process. However, the access device and the operating voltage have significant...
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