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This paper presents the design of a concurrent tri-band Doherty Power Amplifier (DPA) for 1.84 GHz, 2.14 GHz and 2.65 GHz frequency bands. The frequency response around each operating band is maximally flattened adopting a new design strategy. The DPA is based on hybrid technology using two 8 W GaN HEMT as active devices. The results show a peak of drain efficiency higher than 60 % in each operating...
This paper investigates and presents comparative performance of three different digital predistortion techniques for GaN-HEMT based Doherty power amplifier (DPA). Look-Up-Table (LUT), Memory polynomial (MP) and Volterra series based (VB) digital predistortion techniques are examined for the linearization of the DPA in LTE uplink applications. Experimental results demonstrate that for the same level...
The experimental results of an ultra-wideband high-efficiency power amplifier (PA) in GaN technology are presented. The active device is a HEMT with 1 mm of gate periphery. The realised PA operates from 0.8 to 4 GHz, showing a drain efficiency greater than 40% with an output power higher than 32 dBm in the overall bandwidth.
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