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Optical excitation of excitons in semiconductor quantum wells driven by intense, monochromatic terahertz fields results in several-hundred meV-wide frequency combs. Appropriate scaling of the driving field and frequency result in predictable comb bandwidths.
Continuous optical excitation of electron-hole pairs in quantum wells driven by intense, monochromatic terahertz fields leads to high-order sideband generation, up to 90th order. Manipulations of polarization reveal sensitivity to Berry curvature.
Measurements of high-order sideband generation and absorption as a function of near-ir frequency in strong monochromatic sub-THz fields highlight opportunities to explore recollision physics in regimes that are difficult to access in atomic systems.
Continuous optical excitation of excitons in quantum wells driven by intense, monochromatic terahertz fields leads to high-order sideband generation. With optical and terahertz fields perpendicular, sideband generation is enhanced, leading to 60th-order and higher processes.
We report on the development of a tunable antenna coupled intersubband terahertz (TACIT) detector based on GaAs/AlGaAs two dimensional electron gas. A successful device design and micro-fabrication process have been developed which maintain the high mobility (1.1×106 cm2/V-s at 10K) of a 2DEG channel in the presence of a highly conducting backgate. Gate voltage-controlled device resistance and direct...
We have created microcavity polaritons with a lifetime of about 200 ps, which allows them to condense in the ground state of a ring trap. Optical measurements show they have quantized vorticity.
We have developed and tested a technique for measuring the radiation response of the interfaces of silicon-on-insulator (SOI) materials. The approach uses deconvolution of capacitance-voltage (CV) data of full and etched-back SOI structures, to provide the CV curves of each of the three interfaces. From these curves the changes in the voltage due to oxide trapped charge and interface states are determined...
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