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Sunkook Kim, Jinsoo Joo, and co‐workers demonstrate on page 5832 phototransistors based on multilayer MoS2 crystals with a wider spectral response and higher photoresponsivity than single‐layer MoS2 phototransistors. These multilayer MoS2 phototransistors also exhibit high room‐temperature mobilities, near‐ideal subthreshold swings, low operating gate biases, and negligible shifts in the threshold...
Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single‐layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm2V−1s−1), near‐ideal subthreshold swings (∼70 mV decade−1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages...
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