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In this paper we show that tunnel field effect transistors (TFETs) biased in the subthreshold region promise several advantages for low-power/high-frequency analog IC applications (e.g. GHz operation with sub-0.1 mW power consumption). Analytical and TCAD models for graphene nano-ribbon (GNR) and InAs/GaSb nanowire TFETs are employed, respectively, for the first time in subthreshold analog circuit...
The exceptional electrical properties of graphene materials have led to an explosion of research investigating the potential of graphene as the foundation for a future generation of devices as well as developing methods of producing high quality graphene materials. Material quality and our ability to manipulate the properties of graphene will ultimately determine the success of graphene as a device...
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