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Three wideband amplifiers in double-heterojunction bipolar transistor technology have been designed and measured. The amplifiers use different types of distributed amplifier (DA) topologies, all based on cascode gain cells. A single-stage DA design achieves 7.5-dB gain and 192-GHz bandwidth and a two-cascaded single-stage DA achieves an average gain of 16 dB with a bandwidth of 235 GHz. The third...
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