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Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6pJ switching energy, fast 30ns switching speed, and good 10 6 cycling endurance are achieved in Ni/GeO x /Ta 2 O 5−y N y /TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta...
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