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Threshold voltage (V,h) shift under the NBT-stress of TaN gated HfO2/SiO2 stacked gate dielectrics has been studied by conventional DC and the pulsed measurements. A large Vth shift in the early stage of stress occurs typically within 1 s by the fast transient charging under the stress as well as during the Vth measurement. Contributions of both charging components strongly depend on the film quality...
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