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We report a novel TaOx-based selector with trapezoidal band structure, formed by rapid thermal annealing in O2 plasma. Salient features were successfully achieved, such as high current density (1MA/cm2), high selectivity (5×104), low off-state current (∼10 pA), robust endurance (>1010), self-compliance and excellent uniformity. The device is composed of fully CMOS-compatible materials and has no...
A functional neural network for handwritten digits recognition using single binary RRAM as the synaptic weight element, was presented, with successful recognition rate is up to 81%. The results show that multilevel or continual resistances is not necessary for resistive device used as synaptic weight element in hardware neural network application. Variation of RRAM devices, sometimes, would not affect,...
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