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We discuss the modelling, implementation and characterization of antenna-coupled field-effect transistor detectors for THz frequencies. Detectors have been fabricated using a commercial 65-nm CMOS foundry process. At 4.1 THz resonance frequency and optimum operation conditions a responsivity of 86 V/W and noise-equivalent power of 113 pW/√Hz has been measured.
We summarize several lines of investigation of foundry-processed patch-antenna-coupled Si MOSFETs as plasmonic detectors of THz radiation. First, we explore detection at frequencies as high as 4.3 THz, about one hundred times higher than the transit-time-limited cut-off frequency of the devices, searching for the fundamental limits of the detection principle. Then, we address the much-debated issue...
The detection of THz radiation, until recently the domain of specialized technologies, is now becoming linked to main-stream silicon CMOS technology, which entails significant advantages concerning costs, reliability, function integration, etc. Following the prediction that field-effect transistors (FETs) can detect THz radiation far above their cut-off frequency by a mixing process involving plasma...
This paper presents a survey of the status of five active THz imaging modalities which we have developed and investigated during the last few years with the goal to explore their potential for real-time imaging. We start out by introducing a novel waveguide-based all-electronic imaging system which operates at 812 GHz. Its salient feature is a 32-pixel linear detector array heterodyne-operated at...
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