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We hereby present a study of electron mobility in Tri-gate SOI Nanowire (TGNW) transistors in a wide range of temperature from 20K up to 425K. We compared the temperature dependence for different values of the NW cross-section (width and height) and different crystallographic orientations of the conduction channel. We demonstrate that the electron mobility in narrow TGNWs is limited by surface roughness...
As the characteristic size of the devices is now reaching the sub-15 nm range, it has become essential to assess the effects of quantum corrections on the electrical performances. The Non-Equilibrium Green's Functions (NEGF) method is one of the most versatile frameworks for that purpose. It can deal with quantum confinement, elastic and inelastic scattering in a seamless way. Although numerically...
We discuss the phonon-limited mobility of electrons and holes in silicon nanowires as a function of diameter and orientation. We show that 〈110〉 and 〈001〉 nanowires are the best n-type channels, while 〈110〉 and 〈111〉 nanowires are the best p-type channels. We also investigate the mobility in stretched silicon nanowires. We show that the electron and hole mobility can be enhanced or reduced by a factor...
We discuss impurity- and phonon-limited electron mobilities in (110)-oriented silicon nanowires. We show that (1) boron acceptors behave as tunnel barriers for the electrons, while phosphorous donors behave as quantum wells giving rise to Fano resonances in the transmission; (2) As a consequence, the room-temperature mobility is typically much larger in P-doped than in B-doped nanowires; (3) In particular,...
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