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Microsecond transient thermal disturbance (TD) on the conduction and switching of HfOX-based resistive random access memory (RRAM) is investigated using a micro thermal stage (MTS). Temperature-dependent measurement (298–1134 K) induced from MTS is applied to the RRAM during forming, read, write, and reliability measurements for DC and AC conditions. The temperature of the conductive filament (CF)...
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