The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The low-frequency fluctuations of tunneling current in GaAs/AlAs/GaAs single-barrier heterostructure devices were measured for three samples with different Si-planar-doping in the center of 10.2 nm-thick barrier. The diameter of the mesas were close to 100 micrometers. Upon changes of the biasing voltage across the barrier the character of noise spectra also changed — depending on various electron...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.