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The bipolar resistive switching properties of the CBRAM device are investigated for nonvolatile memory applications in a SiO2/ZrO2/SiO2 structure. The device shows good switching characteristics with set/reset voltages less than + 1 V/−1 V with a variation of less than 0.2 V. The SiO2/ZrO2/SiO2 tri-layer CBRAM device exhibits excellent memory performances, such as stable DC endurance up to 103 cycles...
In this letter, we report the impact of post-oxide deposition annealing on the performance of HfO2-based resistive random access memory (RRAM) devices, namely, oxygen-ion-based oxide RRAM (OxRRAM) and Cu-ion-based conductive-bridge RAM (CBRAM) devices. Considerable degradation of the ON/OFF ratio and switching properties was observed in the OxRRAM devices after high-temperature annealing in vacuum,...
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