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In this paper potential strategies to overcome the endurance limitations of hafnium oxide based ferroelectric field effect transistors are discussed. These pathways are based on the assumption that the high interfacial field stress and the accompanying charge injection in the metal-ferroelectricinsulator- semiconductor gate stack are the dominant degradation mechanisms during program and erase operation...
We report on the most aggressively scaled ferroelectric field effect transistor so far. These were successfully fabricated using ferroelectric Si:HfO2 in a 28 nm HKMG stack (TiN/Si:HfO2/SiO2/Si). For a ± 5 V program/erase operation with pulses as short as 20 ns, reliable threshold voltage shifts were observed resulting in a memory window of about 0.9 V. We further demonstrate endurance characteristics...
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